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Ordering number:EN5099
FC154
NPN/PNP Epitaxial Planar Silicon Transistor
High-Speed Switching, High-Frequency Amp Applications
Features
* Composite type with NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly. * The FC154 is formed with two chips, being equivalent to the 2SC4270 and the other the 2SA1699, placed in one package. Electrical Connection
1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6
Package Dimensions
unit:mm 2104A
[FC154]
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter [TR1 (NPN Tr)] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [TR2 (PNPTr)] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 -55 to +150 mW C C VCBO VCEO VEBO IC PC -20 -15 -3 -50 200 V V V mA mW VCBO VCEO VEBO IC PC 25 15 3 50 200 V V V mA mW Symbol Conditions Ratings Unit
Marking:154
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0144 No.5099-1/7
FC154
Continued from Preceding page.
Electrical Characteristics at Ta = 25C
Parameter [TR1 (NPN Tr)] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Power Gain Noise Figure [TR2 (PNPTr)] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE fT Cob VCB=-15V, IE=0 VEB=-2V, IC=0 VCE=-10V, IC=-5mA VCE=-10V, IC=-5mA VCB=-10V, f=1MHz VCE=-10V, IC=-5mA, f=0.9GHz VCE=-10V, IC=-3mA, f=0.9GHz 5 2.0 20 1.5 3.0 1.0 1.5 -0.1 -0.1 100 GHz pF dB dB A A ICBO IEBO hFE fT Cob PG NF VCB=20V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5mA VCE=10V, IC=10mA VCB=10V, f=1MHz VCE=10V, IC=10mA, f=0.9GHz VCE=10V, IC=3mA, f=0.9GHz 60 1.5 3.0 0.7 12 3.0 1.0 0.1 10 200 GHz pF dB dB A A Symbol Conditons Ratings min typ max Unit
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NF
PG, NF Test Circuit
No.5099-2/7
FC154
No.5099-3/7
FC154
No.5099-4/7
FC154
No.5099-5/7
FC154
No.5099-6/7
FC154
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.5099-7/7

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